DocumentCode
1754183
Title
Application of the SLID-ICV interconnection technology for the ATLAS pixel upgrade at SLHC
Author
Andricek, L. ; Beimforde, M. ; Klumpp, A. ; Macchiolo, A. ; Merkel, K.-R. ; Moser, H.-G. ; Nisius, R. ; Richter, R.H. ; Weber, J. ; Weigell, P. ; Wieland, R.
Author_Institution
Max-Planck-Inst. fur Phys., München, Germany
fYear
2010
fDate
16-18 Nov. 2010
Firstpage
1
Lastpage
4
Abstract
The presented R&D activity is focused on the development of a new detector for the upgrade of the ATLAS pixel system at SLHC at CERN, Geneva, employing thin pixel sensors together with a novel vertical integration technology. It consists of the Solid-Liquid-InterDiffusion (SLID) interconnection, which is an alternative to the standard solder bump-bonding, and Inter Chip Vias (ICV) for routing the signal vertically through the readout chips. The SLID interconnection is characterized by a very thin eutectic Cu-Sn alloy, achieved through the deposition of 5 μm of Cu on both sides, and 3 μm of Sn on one side only. The thin pixels are connected by the SLID process to the read out ASICs in the “chip to wafer” approach using tested known good dies. The inter chip vias are placed in the r/o chips before the SLID process in the “via last” approach. This approach gives the highest flexibility for the choice of the sensor and ASIC technology. The best possible sensors can be produced in a highly specialized technology on a dedicated process line and then in subsequent post-processing bonded to r/o ASICs coming from a standard CMOS line.
Keywords
application specific integrated circuits; integrated circuit interconnections; ASIC technology; ATLAS pixel system; ATLAS pixel upgrade; SLHC; SLID-ICV interconnection technology; inter chip vias; solid-liquid-interdiffusion interconnection; standard CMOS line; standard solder bump-bonding; vertical integration technology; Application specific integrated circuits; Bonding; Detectors; Metals; Pixel;
fLanguage
English
Publisher
ieee
Conference_Titel
3D Systems Integration Conference (3DIC), 2010 IEEE International
Conference_Location
Munich
Print_ISBN
978-1-4577-0526-7
Type
conf
DOI
10.1109/3DIC.2010.5751439
Filename
5751439
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