Title :
Monolithic 3D integration of SRAM and image sensor using two layers of single grain silicon
Author :
Golshani, Negin ; Derakhshandeh, Jaber ; Ishihara, Ryoichi ; Beenakker, C.I.M. ; Robertson, Michael ; Morrison, Thomas
Author_Institution :
Delft Inst. of Microsyst. & Nanoelectron. (DIMES), Tech. Univ. Delft, Delft, Netherlands
Abstract :
In this paper we report the monolithic integration of two single grain silicon layers for SRAM and image sensor applications. A 12 × 28 silicon lateral photodiode array with a 25_μm pixel size prepared on top of a three transistor readout circuit with individual outputs for every pixel is demonstrated. 6T SRAM cells with two layers of stacked transistors were prepared to compare the performance and area of each cell in different configurations.
Keywords :
SRAM chips; elemental semiconductors; image sensors; monolithic integrated circuits; photodiodes; readout electronics; silicon; transistor circuits; SRAM cells; image sensor; monolithic 3D integration; monolithic integration; silicon lateral photodiode array; single grain silicon layers; stacked transistors; transistor readout circuit; Logic gates; MOSFETs; Photodiodes; Pixel; Random access memory; Silicon;
Conference_Titel :
3D Systems Integration Conference (3DIC), 2010 IEEE International
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0526-7
DOI :
10.1109/3DIC.2010.5751441
