• DocumentCode
    1754208
  • Title

    A novel concept for ultra-low capacitance via-last TSV

  • Author

    Civale, Y. ; Gonzalez, M. ; Tezcan, D.S. ; Travaly, Y. ; Soussan, P. ; Beyne, E.

  • Author_Institution
    Imec, Leuven, Belgium
  • fYear
    2010
  • fDate
    16-18 Nov. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this study, we report a new concept of through silicon via for 3D applications requiring ultra-low coupling capacitance. The challenges linked to the integration of such structure, as well as preliminary results on stress level and distribution in the TSV are addressed in details below.
  • Keywords
    joining processes; three-dimensional integrated circuits; TSV technology; through silicon via technology; ultra-low coupling capacitance; Capacitance; Copper; Dielectrics; Silicon; Stress; Three dimensional displays; Through-silicon vias; 3D interconnect; Low coupling capacitance; Through-Silicon Via; via-last;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    3D Systems Integration Conference (3DIC), 2010 IEEE International
  • Conference_Location
    Munich
  • Print_ISBN
    978-1-4577-0526-7
  • Type

    conf

  • DOI
    10.1109/3DIC.2010.5751482
  • Filename
    5751482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1754208