Title :
Study of a Thermal Annealing Approach for Very High Total Dose Environments
Author :
Dhombres, S. ; Michez, A. ; Boch, J. ; Saigne, F. ; Beauvivre, S. ; Kraehenbuehl, D. ; Vaille, J.-R. ; Adell, P.C. ; Lorfevre, E. ; Ecoffet, R. ; Roig, Fabien
Author_Institution :
Univ. of Montpellier, Montpellier, France
Abstract :
Total dose effect remains one challenging issue for electronics systems intended to space applications. For high total dose missions, like Jupiter missions, or for scientific instruments for which functionality and precision must be guaranteed, dose effect is one of the main drawbacks. So, new solutions must be found in order to ensure the reliability of the mission. In this paper, an analysis of a thermal annealing approach is done. This approach consists of applying isothermal annealing cycles to a device such that its electrical characteristics can be regenerated after being degraded by total ionizing dose. The analysis is based on experimental results obtained on Power MOSFET and CMOS APS imager. The impact of electric field during annealing is also investigated. It is shown that thermal annealing can be applied to electronic devices in order to extend their lifetime.
Keywords :
CMOS integrated circuits; annealing; electric fields; power MOSFET; semiconductor device reliability; semiconductor devices; CMOS APS imager; Jupiter missions; electric field; electronic devices; electronics systems; isothermal annealing cycles; power MOSFET; total dose environments; Active pixel sensors; Annealing; CMOS integrated circuits; Dark current; Isothermal processes; MOS devices; Radiation effects; Active pixel sensor (APS); CMOS active pixel sensor; MOS devices; extending lifetime; total dose effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2365875
