DocumentCode :
1754451
Title :
Packageless AlN/ZnO/Si Structure for SAW Devices Applications
Author :
Legrani, O. ; Elmazria, O. ; Zhgoon, Sergei ; Pigeat, P. ; Bartasyte, A.
Author_Institution :
Inst. Jean Lamour, Univ. de Lorraine, Vandoeuvre, France
Volume :
13
Issue :
2
fYear :
2013
fDate :
Feb. 2013
Firstpage :
487
Lastpage :
491
Abstract :
The possibility to perform a packageless structure for acoustic wave sensors applications based on AlN/interdigital transducer/ZnO/Si structure was investigated. The effect of thicknesses of AlN and ZnO thin films on structure performance was simulated by 2-D finite element method. Theoretical predictions were confirmed by in-situ measurements of frequency, insertion loss, and thickness during deposition of AlN layer on ZnO/Si.
Keywords :
II-VI semiconductors; aluminium compounds; chemical sensors; finite element analysis; silicon; surface acoustic wave transducers; thin film sensors; wide band gap semiconductors; zinc compounds; 2D finite element method; AlN-ZnO-Si; SAW device applications; acoustic wave sensor applications; in-situ measurements; packageless structure; thin films; Couplings; Films; Silicon; Surface acoustic wave devices; Surface acoustic waves; Zinc oxide; AlN; ZnO; finite element method (FEM); packageless structure; surface acoustic wave (SAW);
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2012.2219692
Filename :
6307810
Link To Document :
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