Fast 3-D Electrothermal Device/Circuit Simulation of Power Superjunction MOSFET Based on SDevice and HSPICE Interaction

Author

Chvala, Ales ; Donoval, Daniel ; Marek, Jiri ; Pribytny, Patrik ; Molnar, Miklos ; Mikolasek, M.

Author_Institution

Inst. of Electron. & Photonics, Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia

Volume

61

Issue

4

fYear

2014

fDate

Apr-14

Firstpage

1116

Lastpage

1122

Abstract

Automated interaction of SDevice and HSPICE for fast 3-D electrothermal simulation based on the relaxation method is designed. The results are compared with device finite element model simulation and a direct method with an equivalent thermal 3-D RC network. The features and limitations of the methods are analyzed and presented. The designed electrothermal simulation based on the relaxation method is developed for Synopsys TCAD Sentaurus environment for decreasing the simulation time for complex 3-D devices. A power vertical superjunction MOSFET under an unclamped inductive switching test of device robustness is used to perform validation of the designed electrothermal simulation.

Keywords

SPICE; power MOSFET; technology CAD (electronics); HSPICE; SDevice; Synopsys TCAD Sentaurus environment; equivalent thermal 3-D RC network; fast 3-D electrothermal device/circuit simulation; power superjunction MOSFET; relaxation method; unclamped inductive switching test; Finite element analysis; Integrated circuit modeling; MOSFET; Relaxation methods; Semiconductor device modeling; Semiconductor process modeling; Solid modeling; 3-D electrothermal simulation; HSPICE; SDevice; superjunction MOSFET; unclamped inductive switching (UIS) test;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2305848

Filename

6755550