• DocumentCode
    1754618
  • Title

    Study of graphene field-effect transistors under electrostatic discharge stresses

  • Author

    Shurong Dong ; Lei Zhong ; Jie Zeng ; Wei Guo ; Hongwei Li ; Jun Wang ; Zhiguang Guo ; Liou, Juin J.

  • Author_Institution
    Dept. of ISEE, Zhejiang Univ., Hangzhou, China
  • Volume
    49
  • Issue
    17
  • fYear
    2013
  • fDate
    August 15 2013
  • Firstpage
    1086
  • Lastpage
    1087
  • Abstract
    Graphene field-effect transistors (GFETs) are characterised for the first time under electrostatic discharge stresses. The GFETs are measured from the transmission line pulsing (TLP) tester and very fast TLP (VFTLP) tester. The turn-on behaviour influenced by back gate voltage is investigated. The I-V curve of the GFETs shows no characteristic of snapback from TLP or VFTLP measurement.
  • Keywords
    electrostatic discharge; field effect transistors; graphene; semiconductor device testing; transmission lines; GFET; I-V curve; VFTLP measurement; back gate voltage; electrostatic discharge stresses; graphene field-effect transistors; transmission line pulsing tester; turn-on behaviour; very fast TLP tester;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2013.1865
  • Filename
    6583121
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1754618