Title :
Study of graphene field-effect transistors under electrostatic discharge stresses
Author :
Shurong Dong ; Lei Zhong ; Jie Zeng ; Wei Guo ; Hongwei Li ; Jun Wang ; Zhiguang Guo ; Liou, Juin J.
Author_Institution :
Dept. of ISEE, Zhejiang Univ., Hangzhou, China
Abstract :
Graphene field-effect transistors (GFETs) are characterised for the first time under electrostatic discharge stresses. The GFETs are measured from the transmission line pulsing (TLP) tester and very fast TLP (VFTLP) tester. The turn-on behaviour influenced by back gate voltage is investigated. The I-V curve of the GFETs shows no characteristic of snapback from TLP or VFTLP measurement.
Keywords :
electrostatic discharge; field effect transistors; graphene; semiconductor device testing; transmission lines; GFET; I-V curve; VFTLP measurement; back gate voltage; electrostatic discharge stresses; graphene field-effect transistors; transmission line pulsing tester; turn-on behaviour; very fast TLP tester;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.1865
