Material Gain Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Light Sources Based on Many-Body Theory

Author

Fujisawa, Takeshi ; Saitoh, Kunimasa

Author_Institution

Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan

Volume

51

Issue

5

fYear

2015

fDate

42125

Firstpage

1

Lastpage

8

Abstract

Material gain of GeSn/SiGeSn quantum wells, which can be grown on Si substrate using a buffer layer, is analyzed based on microscopic many-body theory (MBT) for mid-infrared light sources based on Si photonics. MBT can consider a gain spectrum broadening associated with scattering phenomena, such as Coulomb scattering, based on quantum field theory, and does not need any artificial fitting parameters, such as a relaxation time, used in conventional analysis. Not only $\\Gamma$ - but also carrier distributions in L-points are considered for the gain analysis. Using MBT, the quantum well structures maximizing the material gain and the differential gain at the threshold are investigated in terms of the well thickness, the strain, and the energy difference of quantum states between $\\Gamma$ - and L-points.

Keywords

germanium compounds; infrared sources; many-body problems; photonic band gap; quantum optics; semiconductor quantum wells; silicon; silicon compounds; Coulomb scattering; GeSn-SiGeSn; Si; buffer layer; carrier distributions; gain spectrum broadening; material gain analysis; microscopic many-body theory; midinfrared silicon-based light sources; quantum field theory; quantum well structures; relaxation time; silicon photonics; Charge carrier density; L-band; Light sources; Photonic band gap; Silicon; Strain; GeSn quantum wells; Mid-infrared photonics; Si photonics; many-body theory; many-body theory.;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2015.2410283

Filename

7055223