DocumentCode :
1754769
Title :
Optimized Gallium Arsenide Modulators for Advanced Modulation Formats
Author :
Walker, R.G. ; Cameron, Nigel I. ; Yi Zhou ; Clements, Stephen J.
Author_Institution :
u2t Photonics UK Ltd., Sedgefield, UK
Volume :
19
Issue :
6
fYear :
2013
fDate :
Nov.-Dec. 2013
Firstpage :
138
Lastpage :
149
Abstract :
We review the guided-wave subcomponents required in the design of high-functionality modulators for advanced modulation formats using the GaAs/AlGaAs material system. In these complex devices, small loss contributions rapidly accumulate unless the substructures are well optimized, not only for low loss but also for process tolerance. Results for an advanced 40-Gb/s DQPSK modulator are presented.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical modulation; optical waveguides; quadrature phase shift keying; GaAs-AlGaAs; advanced DQPSK modulator; advanced modulation formats; bit rate 40 Gbit/s; guided-wave subcomponents; optimized high-functionality gallium arsenide modulators; Differential phase-shift keying; electrooptic modulators; gallium arsenide; optical modulation; optical waveguides; semiconductor waveguides;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2013.2266321
Filename :
6523958
Link To Document :
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