DocumentCode
1754769
Title
Optimized Gallium Arsenide Modulators for Advanced Modulation Formats
Author
Walker, R.G. ; Cameron, Nigel I. ; Yi Zhou ; Clements, Stephen J.
Author_Institution
u2t Photonics UK Ltd., Sedgefield, UK
Volume
19
Issue
6
fYear
2013
fDate
Nov.-Dec. 2013
Firstpage
138
Lastpage
149
Abstract
We review the guided-wave subcomponents required in the design of high-functionality modulators for advanced modulation formats using the GaAs/AlGaAs material system. In these complex devices, small loss contributions rapidly accumulate unless the substructures are well optimized, not only for low loss but also for process tolerance. Results for an advanced 40-Gb/s DQPSK modulator are presented.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; optical modulation; optical waveguides; quadrature phase shift keying; GaAs-AlGaAs; advanced DQPSK modulator; advanced modulation formats; bit rate 40 Gbit/s; guided-wave subcomponents; optimized high-functionality gallium arsenide modulators; Differential phase-shift keying; electrooptic modulators; gallium arsenide; optical modulation; optical waveguides; semiconductor waveguides;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.2013.2266321
Filename
6523958
Link To Document