Title :
Characterization of Interfaces Between Contacts and Active Layer in Organic Photovoltaics Using Impedance Spectroscopy and Equivalent Circuit Model
Author :
En-Ping Yao ; Shiun-Ming Shiu ; Yi-Jhe Tsai ; Yu-Shyan Lin ; Wei-Chou Hsu
Author_Institution :
Dept. of Electr. Eng. & Adv. Optoelectron. Technol. Center, Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
This study investigates the interface between the active layer and contacts in organic photovoltaics (OPVs) since the contact materials strongly affect the energy barrier at the interfaces. The interfacial characteristics are simply defined as a resistance-capacitance (R-C) shunt pair and extracted by fitting the impedance spectra to the equivalent circuit model. A change in the energy barrier is found to affect the values of R and C at the interface and the carrier transition time. In addition, the effect of electron buffer layer (TiO2) thickness on the interfacial characteristics is analyzed using an impedance spectroscopy. The interfacial area between the hole buffer layer (MoO3), and the active layer affects the values of R and C at the interface.
Keywords :
aluminium; buffer layers; equivalent circuits; indium compounds; molybdenum compounds; photocapacitance; photovoltaic cells; photovoltaic effects; titanium compounds; Al-ITO-TiO2-MoO3; OPV devices; active layer; carrier transition time; contact materials; contacts layer; electron buffer layer thickness; energy barrier; equivalent circuit model; hole buffer layer; impedance spectroscopy; interface characterization; molybdenum oxide; organic photovoltaics; resistance-capacitance; shunt pair; titanium dioxide; Buffer layers; Cathodes; Energy barrier; Equivalent circuits; Impedance; Indium tin oxide; Carrier transition time; impedance spectroscopy (IS); interface; metal oxide; organic photovoltaics (OPVs);
Journal_Title :
Photovoltaics, IEEE Journal of
DOI :
10.1109/JPHOTOV.2015.2405766