Title :
2-kV and 1.5-kA Semi-Insulating GaAs Photoconductive Semiconductor Switch
Author :
Shi, Wei ; Fu, Zhanglong
Author_Institution :
Dept. of Appl. Phys., Xi´´an Univ. of Technol., Xi´´an, China
Abstract :
Current as high as 1.5 kA has been obtained under a bias voltage of only 2 kV with a single photoconductive semiconductor switch (PCSS) excited by a laser pulse with the energy of 16 mJ. The PCSSs with gap lengths of 1.5 and 2 mm were fabricated by semi-insulating GaAs. The currents of the PCSSs were measured under different bias voltages and capacitance values. In addition, the PCSS operated at 2 kV and 1.5 kA with high stability.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor switches; GaAs; PCSS; current 1.5 kA; laser pulse; semiinsulating photoconductive semiconductor switch; single photoconductive semiconductor switch; voltage 2 kV; Capacitance; Capacitors; Gallium arsenide; Laser stability; Optical pulses; Optical switches; Gallium arsenide (GaAs); nonlinear mode; photoconductive semiconductor switches (PCSSs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2226558
