Ab-Initio Simulation of van der Waals MoTe₂–SnS₂ Heterotunneling FETs for Low-Power Electronics

Author

Szabo, Aron ; Koester, Steven J. ; Luisier, Mathieu

Author_Institution

Integrated Syst. Lab., ETH Zurich, Zurich, Switzerland

Volume

36

Issue

5

fYear

2015

fDate

42125

Firstpage

514

Lastpage

516

Abstract

Band-to-band tunneling field-effect transistors (TFETs) made of a vertical heterojunction of single-layer MoTe₂ and SnS₂ are investigated by means of 3-D, full-band, atomistic quantum-transport simulations relying on a first-principles basis. At a supply voltage V_dd = 0.4 V and OFF-current IOFF = 10^-6 μA/μm, ON-state currents >75 μA/μm are reported for both n- and p-type logic switches. Our findings indicate that metal-dichalcogenide heterojunction TFETs represent a viable option in low-power electronics.

Keywords

field effect transistors; low-power electronics; molybdenum compounds; tin compounds; 3D simulations; MoTe₂-SnS₂; ab-initio simulation; atomistic quantum-transport simulations; band-to-band tunneling field-effect transistors; full-band simulations; low-power electronics; metal-dichalcogenide heterojunction TFET; n-type logic switches; p-type logic switches; van der Waals heterotunneling FET; vertical heterojunction; Field effect transistors; Heterojunctions; Logic gates; Materials; Performance evaluation; Tunneling; Device simulation; tunnel-FET;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2409212

Filename

7055249

Ab-Initio Simulation of van der Waals MoTe2–SnS2 Heterotunneling FETs for Low-Power Electronics

Szabo, Aron ; Koester, Steven J. ; Luisier, Mathieu

jour

Ab-Initio Simulation of van der Waals MoTe₂–SnS₂ Heterotunneling FETs for Low-Power Electronics