Title :
Ab-Initio Simulation of van der Waals MoTe2–SnS2 Heterotunneling FETs for Low-Power Electronics
Author :
Szabo, Aron ; Koester, Steven J. ; Luisier, Mathieu
Author_Institution :
Integrated Syst. Lab., ETH Zurich, Zurich, Switzerland
Abstract :
Band-to-band tunneling field-effect transistors (TFETs) made of a vertical heterojunction of single-layer MoTe2 and SnS2 are investigated by means of 3-D, full-band, atomistic quantum-transport simulations relying on a first-principles basis. At a supply voltage Vdd = 0.4 V and OFF-current IOFF = 10-6 μA/μm, ON-state currents >75 μA/μm are reported for both n- and p-type logic switches. Our findings indicate that metal-dichalcogenide heterojunction TFETs represent a viable option in low-power electronics.
Keywords :
field effect transistors; low-power electronics; molybdenum compounds; tin compounds; 3D simulations; MoTe2-SnS2; ab-initio simulation; atomistic quantum-transport simulations; band-to-band tunneling field-effect transistors; full-band simulations; low-power electronics; metal-dichalcogenide heterojunction TFET; n-type logic switches; p-type logic switches; van der Waals heterotunneling FET; vertical heterojunction; Field effect transistors; Heterojunctions; Logic gates; Materials; Performance evaluation; Tunneling; Device simulation; tunnel-FET;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2409212
