DocumentCode
1755007
Title
Surface-Plasmon Waveguides as Transmission Lines for Optical Signal and Electrical Bias
Author
Fukuhara, Masashi ; Ota, Masashi ; Takeda, Akiko ; Aihara, Takuma ; Sakai, Hiroki ; Ishii, Y. ; Fukuda, Motohisa
Author_Institution
Dept. of Electr. & Electr. Inf. Eng., Toyohashi Univ. of Technol., Toyohashi, Japan
Volume
32
Issue
23
fYear
2014
fDate
Dec.1, 1 2014
Firstpage
4490
Lastpage
4495
Abstract
Using metal plasmonic waveguides as transmission lines for optical signals and an electrical bias is shown to be feasible in Si-based devices with a separation gap formed between the waveguide and Au/Si Schottky-barrier diode (SBD). Optical signal transmission is confirmed by calculating the radiation pattern from the waveguide edge and measuring the photocurrent detected at the SBD. From a finite-difference time-domain simulation, the radiation pattern from the waveguide edge is represented as an interference fringe. The simulation result for the separation-length dependence of the detected photocurrent at the SBD corresponds well with experiment. Moreover, the intensity-modulated optical signal at 10 MHz is also observed across the 3-μm-length separation gap. The electrical bias separation is confirmed by applying a bias voltage between the waveguide and the Si substrate and generating a bias current through the waveguide. The detected photocurrent at the SBD barely increased with changing bias voltage and was clearly smaller than that under changes in optical intensity. In addition, electrical current produced no influence on the surface-plasmon signal on the waveguide.
Keywords
Schottky barriers; Schottky diodes; finite difference time-domain analysis; light interference; light transmission; optical interconnections; optical modulation; optical waveguides; photodetectors; silicon; surface plasmons; transmission lines; Au-Si; bias current; electrical bias separation; finite-difference time-domain simulation; frequency 10 MHz; gold-silicon Schottky-barrier diode; intensity-modulated optical signal; interference fringe; metal plasmonic waveguides; photocurrent detection; radiation pattern calculation; separation-length dependence; silicon-based devices; size 3 mum; surface-plasmon waveguides; transmission lines; Gold; Optical device fabrication; Optical scattering; Optical waveguides; Photoconductivity; Plasmons; Signal detection; MOS devices; Plasmons; Schottky diodes; near-field radiation pattern; optical interconnections; plasmons;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.2014.2357801
Filename
6912931
Link To Document