Title :
Anomalous Staircase CV Characteristics of InGaSb-on-Insulator FET
Author :
Alam, Md Nur Kutubul ; Islam, Md Shariful ; Kibria, Md Golam ; Islam, Md Rafiqul
Author_Institution :
Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh
Abstract :
Quasi-static capacitance voltage (CV) characteristics of In1-xGaxSb-on-insulator field-effect transistor (FET) are investigated using 1-D coupled Schrödinger-Poisson equations. Here, we report for the first time the staircase trend in the CV characteristics of such ultrathin-body FET. This observation is well correlated with the gate-bias-dependent electron concentration in different subbands. It is revealed that the staircase trend tends to disappear as the channel thickness increases above 15 nm. While the channel thickness and doping concentration-dependent shifts in CV curves are found to be significant, the composition-dependent shift is almost negligible.
Keywords :
Poisson equation; Schrodinger equation; field effect transistors; indium compounds; 1D coupled Schrödinger-Poisson equation; In1-xGaxSb; In1-xGaxSb-on-Insulator FET; anomalous staircase CV characteristics; channel thickness; composition-dependent shift; doping concentration; field-effect transistor; gate-bias-dependent electron concentration; quasistatic capacitance voltage characteristics; ultrathin-body FET; Capacitance; Capacitance-voltage characteristics; Doping; Educational institutions; Field effect transistors; Logic gates; Silicon; Capacitance voltage (CV) characteristics; InGaSb; field-effect transistor (FET); self-consistent analysis; staircase; ultrathin body;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2358650
