DocumentCode
1755347
Title
A hot prospect
Volume
50
Issue
3
fYear
2014
fDate
January 30 2014
Firstpage
132
Lastpage
132
Abstract
Researchers at the Naval Research Laboratory in Washington, USA, have implanted Mg in GaN and employed a novel high-temperature annealing technique that has realised electrical activation of implanted material for the first time without co-implantation, and demonstrated an increase in the activation ratios for in situ Mg-doped GaN from around 1% to a record 10%.
Keywords
III-V semiconductors; annealing; gallium compounds; high-temperature techniques; ion implantation; magnesium; power semiconductor devices; semiconductor doping; wide band gap semiconductors; GaN:Mg; Mg-doped GaN; activation ratio; high-temperature annealing technique; high-voltage GaN-based power devices; implanted material electrical activation; p-type doping;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2014.0197
Filename
6731721
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