• DocumentCode
    1755394
  • Title

    Impedance Measurement and Characterization of Ag-Ge30Se70-Based Programmable Metallization Cells

  • Author

    Mahalanabis, Debayan ; Gonzalez-Velo, Y. ; Barnaby, H.J. ; Kozicki, M.N. ; Dandamudi, P. ; Vrudhula, Sarma

  • Author_Institution
    Sch. of Electr., Arizona State Univ., Tempe, AZ, USA
  • Volume
    61
  • Issue
    11
  • fYear
    2014
  • fDate
    Nov. 2014
  • Firstpage
    3723
  • Lastpage
    3730
  • Abstract
    Chalcogenide glass-based programmable metallization cell (PMC) devices undergo Ag+-ion transport and controlled resistance change under the application of electrical bias. In this paper, photo-doped PMC devices are characterized with impedance spectroscopy. Photo doping is an important step in PMC fabrication as it introduces the mobile Ag into the electrolyte and, therefore, has a significant effect on device characteristics. Data obtained from measurements on devices with different areas in both their high resistance state (HRS) and low resistance state (LRS) are used to parameterize equivalent circuit models. The models elucidate the differences in the HRS and LRS electrical properties.
  • Keywords
    chalcogenide glasses; electrolytes; germanium compounds; integrated circuit measurement; integrated circuit metallisation; random-access storage; silver compounds; Ag-Ge30Se70; Ag+-ion transport; HRS electrical properties; LRS electrical properties; ReRAM; chalcogenide glass-based programmable metallization cell devices; controlled resistance change; electrical bias; electrolyte; equivalent circuit models; high resistance state; impedance characterization; impedance measurement; impedance spectroscopy; low resistance state; photo-doped PMC devices; photodoping; resistive switching random access memory; Anodes; Capacitance; Cathodes; Impedance; Impedance measurement; Resistance; Switches; Chalcogenide (ChG); electrochemical memory cell; electrochemical metallization memory (ECM); impedance spectra; nanoionic memory; photo doping; programmable metallization cells (PMCs); resistive switching random access memory (ReRAM); solid-state electrolyte;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2014.2358573
  • Filename
    6912973
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1755394