DocumentCode :
1755407
Title :
Design and Characterization of 
-Band (220–325 
GHz) Amplifiers in a 250-nm InP DHBT Te
Author :
Eriksson, Klas ; Gunnarsson, Sten E. ; Vassilev, Vessen ; Zirath, Herbert
Author_Institution :
Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden
Volume :
4
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
56
Lastpage :
64
Abstract :
Design and characterization of InP DHBT amplifiers in common-emitter and common-base topologies are presented. Both one-stage and multistage circuits are demonstrated. For one of the amplifiers, a peak gain of 24 dB at 255 GHz is measured, which is among the highest reported gains for HBT amplifiers above 200 GHz, and more than 10 dB gain at 210-315 GHz. The noise figure of this amplifier is measured on-wafer at 240-295 GHz, and it demonstrates a minimum noise figure of 10.4 dB at 265 GHz, which is the lowest reported noise figure for HBT amplifiers above 200 GHz.
Keywords :
III-V semiconductors; MMIC amplifiers; heterojunction bipolar transistors; indium compounds; topology; DHBT technology; H-band amplifiers; HBT amplifiers; InP; common-base topologies; common-emitter topologies; double heterojunction bipolar transistor; frequency 220 GHz to 325 GHz; multistage circuits; noise figure; one-stage circuits; DH-HEMTs; Frequency measurement; Gain; Indium phosphide; Inductance; Noise; Power generation; $H$
fLanguage :
English
Journal_Title :
Terahertz Science and Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-342X
Type :
jour
DOI :
10.1109/TTHZ.2013.2275900
Filename :
6583229
Link To Document :
