DocumentCode
1755471
Title
Reference voltage generation scheme enhancing speed and reliability for 1T1C-type FRAM
Author
Ze Jia ; Gong Zhang ; Jizhi Liu ; Zhiwei Liu ; Liou, Juin J.
Author_Institution
Sch. of Microelectron. & Solid-State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Volume
50
Issue
3
fYear
2014
fDate
January 30 2014
Firstpage
154
Lastpage
156
Abstract
An improved reference voltage generation scheme is proposed for a 1T1C-type ferroelectric random access memory (FRAM), in which the circuit referring to reference cells is redefined and the data are written into reference cells at random between `1´ and `0´ depending on the voltages of the bitlines during every operation cycle. Compared with conventional schemes, it can not only realise higher access speed for memory, but also can enhance its reliability by resolving the imprint and relieving the fatigue relating to ferroelectric capacitors in the device. Functional verification for the experimental prototype utilising the proposed scheme has been implemented.
Keywords
circuit reliability; ferroelectric capacitors; ferroelectric storage; random-access storage; reference circuits; 1T1C-type FRAM; 1T1C-type ferroelectric random access memory; ferroelectric capacitor; reference voltage generation scheme; reliability;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.3193
Filename
6731734
Link To Document