DocumentCode
1755579
Title
Global View on Dose Rate Effects in Silica-Based Fibers and Devices Damaged by Radiation-Induced Carrier Trapping
Author
Mady, F. ; Benabdesselam, M. ; Duchez, Jean-Bernard ; Mebrouk, Y. ; Girard, S.
Author_Institution
Lab. de Phys. de la Mater. Condensee, Univ. of Nice Sophia Antipolis, Nice, France
Volume
60
Issue
6
fYear
2013
fDate
Dec. 2013
Firstpage
4341
Lastpage
4348
Abstract
We give a novel and very general treatment to a standard model describing dose rate effects in systems damaged by carrier trapping. This model is well adapted for optical fibers, but the lessons we draw may also be helpful to discuss dose rate effects (DRE) in electronic devices. By highlighting the few determinant ratios of physical parameters that govern the system behavior, we clarify when, how and how much dose rate effects affect trap filling and radiation-induced degradation. Critical dose rate, marking the demarcation between low and high dose rate regimes, is also estimated as a function of these parameters. Taking this step back is important to enlighten contradictory results reported on DRE behaviors. The dose and dose rate dependencies of trap filling measured on silica optical fibers, as well as the critical dose rate, are successfully reproduced with a single set of a few adjustable physical parameters.
Keywords
electron traps; hole traps; optical fibres; radiation hardening (electronics); silicon compounds; DRE behaviors; SiO2; dose rate effects; electronic devices; optical fibers; radiation-induced carrier trapping; radiation-induced degradation; silica-based fibers; trap filling; Degradation; Electron traps; Modeling; Optical fibers; Radiation effects; Carrier trapping; dose rate effects; modeling; optical fibers; total dose effects;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2013.2282410
Filename
6661413
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