A Wire Bonding Structure Directly Based on Substrate Integrated Waveguide Technology

When integrating an integrated circuit (IC) chip with a substrate integrated waveguide (SIW), the usual practice is first to convert the SIW to a microstrip, and then make wire bonding between the IC Chip and the microstrip. Consequently, the transition between the SIW and microstrip will enlarge the circuit size and introduce extra loss. In this letter, a novel wire bonding structure directly between the SIW and IC Chip is proposed, which not only reduced the circuit size and loss but also weakened the sensitivity etc. Two W-band low noise amplifier (LNA) prototypes are designed and fabricated with and without SIW-to-Microstrip transitions, respectively. Compared with the microstrip wire bonding structure, the direct SIW wire bonding structure efficiently reduced the circuit size and improved the performance.