Single-Event Transient Effect on a Self-Biased Ring-Oscillator PLL and an LC PLL Fabricated in SOS Technology

Author

Shita Guo ; Jingxiao Li ; Ping Gui ; Yi Ren ; Li Chen ; Bhuva, B.L.

Author_Institution

Southern Methodist Univ., Dallas, TX, USA

Volume

60

Issue

6

fYear

2013

fDate

Dec. 2013

Firstpage

4668

Lastpage

4672

Abstract

The single-event transient effect on a ring-oscillator based and an LC-tank based phased-locked loop circuits fabricated in a 0.25 μm silicon-on-sapphire technology is analyzed with circuit-level simulations followed by laser experiments. Advantages of the LC-tank based circuits in terms of single-event tolerance over the ring-oscillator based circuits are discussed.

Keywords

LC circuits; circuit simulation; integrated circuit design; phase locked loops; phase locked oscillators; silicon-on-insulator; transient analysis; voltage-controlled oscillators; LC PLL; LC-tank based phased-locked loop circuits; SOS technology; circuit-level simulations; laser experiments; ring-oscillator based circuits; self-biased ring-oscillator PLL; silicon-on-sapphire technology; single-event tolerance; single-event transient effect; size 0.25 mum; Phase locked loops; Silicon on sapphire; Single event transients; Transient analysis; Voltage-controlled oscillators; Double-exponential simulation; SET laser test; phased-locked loop (PLL); single-event transient (SET);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2283057

Filename

6661454