Title :
High-Gain InAs Avalanche Photodiodes
Author :
Wenlu Sun ; Zhiwen Lu ; Xiaoguang Zheng ; Campbell, Joe C. ; Maddox, Scott J. ; Nair, H.P. ; Bank, Seth R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
We report two InAs avalanche photodiode structures with very low background doping in the depletion region. Uniform electric fields and thick depletion regions have been achieved. Excess noise measurements are consistent with k~0 and gain as high as 70 at room temperature is observed. The measured gain-bandwidth product is >; 300 GHz. All measurements are consistent with Monte Carlo simulations.
Keywords :
III-V semiconductors; Monte Carlo methods; avalanche photodiodes; indium compounds; noise measurement; optical variables measurement; photodetectors; semiconductor doping; InAs; Monte Carlo simulation; excess noise measurements; gain-bandwidth product; high-gain avalanche photodiodes; low background doping; temperature 293 K to 298 K; thick depletion regions; uniform electric fields; Current measurement; Dark current; Doping; Gain measurement; Noise; Semiconductor device measurement; Temperature measurement; Avalanche photodiode; Monte Carlo simulation; excess noise; gain-bandwidth product;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2012.2233462
