High-Gain InAs Avalanche Photodiodes

Author

Wenlu Sun ; Zhiwen Lu ; Xiaoguang Zheng ; Campbell, Joe C. ; Maddox, Scott J. ; Nair, H.P. ; Bank, Seth R.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA

Volume

49

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

154

Lastpage

161

Abstract

We report two InAs avalanche photodiode structures with very low background doping in the depletion region. Uniform electric fields and thick depletion regions have been achieved. Excess noise measurements are consistent with k~0 and gain as high as 70 at room temperature is observed. The measured gain-bandwidth product is >; 300 GHz. All measurements are consistent with Monte Carlo simulations.

Keywords

III-V semiconductors; Monte Carlo methods; avalanche photodiodes; indium compounds; noise measurement; optical variables measurement; photodetectors; semiconductor doping; InAs; Monte Carlo simulation; excess noise measurements; gain-bandwidth product; high-gain avalanche photodiodes; low background doping; temperature 293 K to 298 K; thick depletion regions; uniform electric fields; Current measurement; Dark current; Doping; Gain measurement; Noise; Semiconductor device measurement; Temperature measurement; Avalanche photodiode; Monte Carlo simulation; excess noise; gain-bandwidth product;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2012.2233462

Filename

6378388