DocumentCode :
1756197
Title :
Development of Pulse Transfer Circuits for Serially Biased SFQ Circuits Using the Nb 9-Layer 1- \\mu\\hbox {m} Process
Author :
Ehara, K. ; Takahashi, Asami ; Yamanashi, Y. ; Yoshikawa, N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Yokohama Nat. Univ., Yokohama, Japan
Volume :
23
Issue :
3
fYear :
2013
fDate :
41426
Firstpage :
1300504
Lastpage :
1300504
Abstract :
Serial biasing is a promising technology to reduce the total bias current of single flux quantum (SFQ) circuits. In this technique, each circuit block is placed on separated floating ground planes and biased serially. In this study, we developed a new coupling structure of SFQ pulse transfer circuits between the different ground planes using the Nb 9-layer ISTEC advanced process (ADP2.3). By using thick insulating and shielding layers, the pulse transfer circuit became robust to external magnetic fields with enough bias margins. The high-speed operation of serially biased SFQ circuits was demonstrated by on-chip high-speed tests.
Keywords :
coupled circuits; driver circuits; high-speed integrated circuits; integrated circuit testing; niobium; pulse circuits; superconducting integrated circuits; type II superconductors; Nb; Nb 9-layer 1-μm process; circuit block; coupling structure; floating ground planes; high-speed operation; insulating layers; on-chip high-speed tests; pulse transfer circuits; serially biased SFQ circuits; shielding layers; single flux quantum circuits; Couplings; Current measurement; Integrated circuits; Magnetic separation; Niobium; Receivers; Current recycling; inductive coupling; rapid single flux quantum (RSFQ); serial biasing; superconducting integrated circuits;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/TASC.2012.2233535
Filename :
6378421
Link To Document :
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