DocumentCode
1756478
Title
Re-Examining the Doping Effect on the Performance of Quantum Well Infrared Photodetectors
Author
Mingrui Hao ; Shuai Zhang ; Yueheng Zhang ; Wenzhong Shen ; Schneider, H. ; Huichun Liu
Author_Institution
Dept. of Phys. & Astron., Shanghai Jiao Tong Univ., Shanghai, China
Volume
50
Issue
1
fYear
2014
fDate
Jan. 2014
Firstpage
3
Lastpage
6
Abstract
This paper investigates the dependence of background limited performance (BLIP) temperature of quantum well infrared photodetectors (QWIPs) on doping density. In contrast to the generally accepted optimal doping condition EF=kBTBLIP, our theoretical prediction shows that lower doping densities should slightly increase the BLIP temperature TBLIP taking into account the temperature dependence of the Fermi energy EF, a factor neglected in the previous analyses. Numerical modeling results are used to reinterpret the reported TBLIP measurements for a series of QWIPs of typical design for 9 μm peak wavelength with different doping values. In addition, based on the same general expression for the Fermi energy, the optimized sheet doping concentration to achieve maximum detectivity is given by EF=1.37 kBT, a revision to the previous EF=2 kBT condition.
Keywords
Fermi level; doping profiles; infrared detectors; photodetectors; quantum well devices; semiconductor doping; Fermi energy; QWIP; background limited performance temperature; doping concentration; doping effect; optimal doping condition; quantum well infrared photodetector; temperature dependence; Absorption; Approximation methods; Dark current; Detectors; Doping; Photodetectors; Temperature dependence; Quantum well infrared photodetectors (QWIPs); background limited performance (BLIP) temperature; detectivity; doping density;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2013.2290535
Filename
6662386
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