Title :
An a-InGaZnO TFT Pixel Circuit Compensating Threshold Voltage and Mobility Variations in AMOLEDs
Author :
Yongchan Kim ; Kanicki, J. ; Hojin Lee
Author_Institution :
MEMS Display & Sensor Lab., Soongsil Univ., Seoul, South Korea
Abstract :
In this paper, we proposed a novel voltage-programmed pixel circuit based on amorphous indium gallium zinc-oxide thin-film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting display (AMOLED) with an enhanced electrical stability and uniformity. Through an extensive simulation work based on a-InGaZnO TFT and OLED experimental data, we confirm that the proposed pixel circuit can compensate for both mobility variation and threshold voltage shift of the driving TFT.
Keywords :
LED displays; amorphous semiconductors; gallium compounds; indium compounds; organic light emitting diodes; thin film transistors; AMOLED; InGaZnO; a-InGaZnO TFT pixel circuit; active-matrix organic light-emitting display; amorphous indium gallium zinc-oxide thin-film transistor; electrical stability; electrical uniformity; mobility variations; threshold voltage; voltage-programmed pixel circuit; Active matrix organic light emitting diodes; Capacitors; Logic gates; Thin film transistors; Threshold voltage; Active-matrix organic light-emitting display (AMOLED); amorphous indium gallium zinc oxide (a-InGaZnO); mobility variation; pixel circuit; thin-film transistor (TFT);
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2014.2304615
