An a-InGaZnO TFT Pixel Circuit Compensating Threshold Voltage and Mobility Variations in AMOLEDs

Author

Yongchan Kim ; Kanicki, J. ; Hojin Lee

Author_Institution

MEMS Display & Sensor Lab., Soongsil Univ., Seoul, South Korea

Volume

10

Issue

5

fYear

2014

fDate

41760

Firstpage

402

Lastpage

406

Abstract

In this paper, we proposed a novel voltage-programmed pixel circuit based on amorphous indium gallium zinc-oxide thin-film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting display (AMOLED) with an enhanced electrical stability and uniformity. Through an extensive simulation work based on a-InGaZnO TFT and OLED experimental data, we confirm that the proposed pixel circuit can compensate for both mobility variation and threshold voltage shift of the driving TFT.

Keywords

LED displays; amorphous semiconductors; gallium compounds; indium compounds; organic light emitting diodes; thin film transistors; AMOLED; InGaZnO; a-InGaZnO TFT pixel circuit; active-matrix organic light-emitting display; amorphous indium gallium zinc-oxide thin-film transistor; electrical stability; electrical uniformity; mobility variations; threshold voltage; voltage-programmed pixel circuit; Active matrix organic light emitting diodes; Capacitors; Logic gates; Thin film transistors; Threshold voltage; Active-matrix organic light-emitting display (AMOLED); amorphous indium gallium zinc oxide (a-InGaZnO); mobility variation; pixel circuit; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2014.2304615

Filename

6732903