Mobility and Capacitance Comparison in Scaled InGaAs Versus Si Trigate MOSFETs

In this letter, we study the electronic properties of InGaAs and Si trigates using the nonparabolic effective mass approximation and up-to-date mobility models. Our comprehensive simulations estimate a strong reduction of the InGaAs electron mobility to values even lower than those achieved with Si. Considering the reduction of the gate capacitance due to the low density-of-states of the III-V alloy, no apparent benefit would be obtained from using InGaAs trigates instead of Si ones unless high quality interfaces can be achieved. We conclude that the potential application of InGaAs trigates as a reference device for future technological nodes is seriously jeopardized by the quality of the semiconductor-insulator interface.