Nonparabolic Multivalley Quantum Correction Model for InGaAs Double-Gate Structures

Author

Penzin, Oleg ; Paasch, G. ; Smith, Lee

Author_Institution

Synopsys Inc., Hillsboro, OR, USA

Volume

60

Issue

7

fYear

2013

fDate

41456

Firstpage

2246

Lastpage

2250

Abstract

An extension of the modified local density approximation (MLDA) to account for quantum confinement effects in narrow-band multivalley semiconductors is presented. The original MLDA model is also extended to account for confinement in double-gate and fin-shaped FET devices. The extended model is validated against self-consistent Poisson-Schrödinger results for various double-gate metal-oxide-semiconductor structures with InGaAs as the semiconductor material.

Keywords

III-V semiconductors; MIS structures; Poisson equation; Schrodinger equation; field effect transistors; gallium arsenide; indium compounds; InGaAs; MLDA; double-gate metal-oxide-semiconductor structure; fin-shaped FET device; modified local density approximation; narrow-band multivalley semiconductor; nonparabolic multivalley quantum correction model; quantum confinement effect; self-consistent Poisson-Schrödinger result; semiconductor material; III–V semiconductors; InGaAs; double-gate structure; metal-oxide-semiconductor field-effect transistor (MOSFET); modified local density approximation (MLDA); quantum correction; technology computer-aided design (TCAD);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2264165

Filename

6525339