Title :
Nonparabolic Multivalley Quantum Correction Model for InGaAs Double-Gate Structures
Author :
Penzin, Oleg ; Paasch, G. ; Smith, Lee
Author_Institution :
Synopsys Inc., Hillsboro, OR, USA
Abstract :
An extension of the modified local density approximation (MLDA) to account for quantum confinement effects in narrow-band multivalley semiconductors is presented. The original MLDA model is also extended to account for confinement in double-gate and fin-shaped FET devices. The extended model is validated against self-consistent Poisson-Schrödinger results for various double-gate metal-oxide-semiconductor structures with InGaAs as the semiconductor material.
Keywords :
III-V semiconductors; MIS structures; Poisson equation; Schrodinger equation; field effect transistors; gallium arsenide; indium compounds; InGaAs; MLDA; double-gate metal-oxide-semiconductor structure; fin-shaped FET device; modified local density approximation; narrow-band multivalley semiconductor; nonparabolic multivalley quantum correction model; quantum confinement effect; self-consistent Poisson-Schrödinger result; semiconductor material; III–V semiconductors; InGaAs; double-gate structure; metal-oxide-semiconductor field-effect transistor (MOSFET); modified local density approximation (MLDA); quantum correction; technology computer-aided design (TCAD);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2264165
