DC and AC Characterization of MgO Magnetic Tunnel Junction Sensors

Author

Arikan, Murat ; Ingvarsson, Snorri ; Carter, M. ; Gang Xiao

Author_Institution

Sci. Inst., Univ. of Iceland, Reykjavik, Iceland

Volume

49

Issue

11

fYear

2013

fDate

Nov. 2013

Firstpage

5469

Lastpage

5474

Abstract

We have fabricated multiple MgO magnetic tunnel junctions (MTJ) with 1.7 nm oxide, which are connected in series, and layed out in a serpentine geometry. We performed DC tunnel magnetoresistance measurements and AC impedance spectroscopy with crossed DC magnetic fields in the easy and hard axis directions. A simple RLC circuit model is used to fit our data and characterize the dependence on capacitance (C) and inductance (L) of magnetization orientation of the MTJ sensors. We have found in our samples that C and L are higher in antiparallel than in parallel configuration. We discuss possible reasons for the existence of this field dependence and show the evolution of magnetic field vs. capacitance curve from memory mode into sensing mode at high frequencies.

Keywords

RLC circuits; capacitance; inductance; magnesium compounds; magnetic sensors; magnetisation; magnetoresistive devices; tunnelling magnetoresistance; AC characterization; AC impedance spectroscopy; DC characterization; DC tunnel magnetoresistance measurements; MTJ sensors; MgO; capacitance dependence; crossed DC magnetic fields; field dependence; hard axis direction; inductance; magnetic tunnel junction sensors; magnetization orientation; memory mode; sensing mode; serpentine geometry; simple RLC circuit model; size 1.7 nm; Magnetic sensors; MgO; magnetic tunnel junction; magnetocapacitance; magnetoimpedance; magnetoinductance; magnetoresistance;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2013.2266327

Filename

6525346