Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Author

Zhang, Wei ; Zhang, Yue ; Mao, Wei ; Ma, XiaoHua ; Zhang, JinCheng ; Hao, Yue

Author_Institution

Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China

Volume

34

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

45

Lastpage

47

Abstract

In this letter, the effects of the interface acceptor-like traps on the transient responses of AlGaN/GaN high-electron mobility transistors (HEMTs) are investigated by means of experimental measurements and numerical simulations. The variation trends of the drain current I_DS stimulated by the gate (V_GS) and drain (V_DS) turn-on voltage pulses have been analyzed. The successive numerical simulations are carried out on the test structure, into which a trapping region at the AlGaN/GaN interface is introduced. The same variation trends are observed on both of the simulated V_GS and V_DS turn-on pulse measurements. The observation proves that the interface acceptor-like trap is the factor dominating the turn-on transient response of the HEMT devices.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; interface states; numerical analysis; pulse measurement; transient response; wide band gap semiconductors; AlGaN-GaN; HEMT device; drain current; high-electron mobility transistor; interface acceptor-like traps; numerical simulation; trapping region; turn-on pulse measurement; turn-on transient response; turn-on voltage pulse; Aluminum gallium nitride; Electron traps; Gallium nitride; HEMTs; MODFETs; Market research; Acceptor-like trap; AlGaN/GaN high-electron mobility transistor (HEMT); device simulation; transient response; turn-on pulse;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2227235

Filename

6380531