DocumentCode
1756949
Title
New Planar Junction Edge Termination Technique Using OPTVLD With a Buried Layer
Author
Junji Cheng ; Xingbi Chen
Author_Institution
State Key Lab. of Electron. Thin Films & Integrated Devices of China, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Volume
60
Issue
7
fYear
2013
fDate
41456
Firstpage
2428
Lastpage
2431
Abstract
A new planar junction edge termination technique, using the optimum variation lateral doping with a buried layer, is proposed and studied. A voltage equal to 100% of the breakdown voltage of a single-sided abrupt parallel-plane junction with the same substrate can be achieved within a smallest area on the surface. The proposed technique can be realized by a process compatible with conventional CMOS or BiCMOS technologies and verified by the results of numerical simulations.
Keywords
BiCMOS integrated circuits; buried layers; numerical analysis; semiconductor doping; BiCMOS technologies; CMOS technologies; OPTVLD; buried layer; numerical simulations; optimum variation lateral doping; parallel-plane junction; planar junction edge termination; BiCMOS; CMOS; electric field profile; optimum variation lateral doping (OPTVLD); planar junction edge termination technique; power devices;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2013.2264342
Filename
6525360
Link To Document