• DocumentCode
    1756977
  • Title

    A Sub- \\mu{\\rm W} Bandgap Reference Circuit With an Inherent Curvature-Compensation Property

  • Author

    Kin Keung Lee ; Lande, Tor Sverre ; Hafliger, Philipp Dominik

  • Author_Institution
    Dept. of Inf., Univ. of Oslo, Oslo, Norway
  • Volume
    62
  • Issue
    1
  • fYear
    2015
  • fDate
    Jan. 2015
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    A new current-mode bandgap reference circuit (BGR) which is capable of generating sub-1-V output voltage is presented. It has not only the lowest theoretical minimum current consumption among published current-mode BGRs, but also additional advantages of an inherent curvature-compensation function and not requiring NPN BJTs. The curvature-compensation is achieved by utilizing the exponential behavior of sub-threshold CMOS transistors to compensate the BJT base-emitter voltage high-order temperature dependence. By taking advantages of the continuing development of CMOS technology, sub- μW power consumption is achieved with a reasonable core area. Related design considerations and challenges are discussed and analyzed. The proposed BGR is realized in a TSMC 90 nm process. Measurement results shows a temperature coefficient without trimming as low as 10.1 ppm/°C over a temperature range of 70 °C because of the proposed curvature-compensation technique. The average value is 32.6 ppm/°C which could be improved by trimming resistor ratios. The average power consumption at room temperature is 576 nW, with a core area of only 0.028 mm2.
  • Keywords
    CMOS integrated circuits; MOSFET; compensation; current-mode circuits; reference circuits; BGR; BJT base-emitter voltage high-order temperature dependence; NPN BJT; TSMC process; current consumption; current-mode bandgap reference circuit; inherent curvature-compensation property; power 576 nW; power consumption; resistor ratio trimming; size 90 nm; subthreshold CMOS transistor; temperature 293 K to 298 K; CMOS integrated circuits; CMOS process; Resistors; Temperature dependence; Temperature distribution; Temperature measurement; Transistors; CMOS; bandgap reference; curvature-compensation; low-power; nano-meter (nm); nano-watt (nW); wireless sensor network;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2014.2340553
  • Filename
    6913570