Modeling of Multiple-Quantum-Well p-i-n Photodiodes

Author

Gan Zhou ; Runge, Patrick

Author_Institution

Fraunhofer Heinrich Hertz Inst., Berlin, Germany

Volume

50

Issue

4

fYear

2014

fDate

41730

Firstpage

220

Lastpage

227

Abstract

A model for multiple-quantum well (MQW) p-i-n photodiode (PD) is presented. The model accounts for the responsivity spectrum and the polarization-dependent loss. The important physical effects for modeling MQW PDs are the carrier transit time through the MQW layers and the free carrier density in the quantum wells. Furthermore, both effects influence the internal quantum efficiency and saturation of the optical absorption. The model is verified by comparing with the measurement results of a waveguide integrated MQW p-i-n PD. It is suitable for optimizing the design and describing the properties of MQW p-i-n PDs.

Keywords

carrier density; infrared spectra; light polarisation; optical design techniques; optical losses; p-i-n photodiodes; quantum well devices; semiconductor device models; semiconductor quantum wells; MQW layers; MQW p-i-n PD; carrier transit time; free carrier density; internal quantum efficiency; multiple-quantum-well p-i-n photodiodes; optical absorption saturation; polarization-dependent loss; responsivity spectrum; Absorption; Charge carrier density; Electric fields; Excitons; Quantum well devices; Radiative recombination; Multiple-quantum well; exciton; free carrier density; model; photodiode; polarization-dependent loss; responsivity; saturation; transit time;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2014.2305015

Filename

6733265