Title :
Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
Author :
Rui Zhang ; Kuan-Chang Chang ; Ting-Chang Chang ; Tsung-Ming Tsai ; Syuan-Yong Huang ; Wen-Jen Chen ; Kai-Huang Chen ; Jen-Chung Lou ; Jung-Hui Chen ; Tai-Fa Young ; Min-Chen Chen ; Hsin-Lu Chen ; Shu-Ping Liang ; Yong-En Syu ; Sze, Simon M.
Author_Institution :
Sch. of Software & Microelectron., Peking Univ., Beijing, China
Abstract :
In this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide (Gd:SiO2) resistance random access memory (RRAM). We find that oxygen absorbance by indium-tin-oxide electrode affects the conduction current mechanism, and remarkably modifies the device performance of RRAM devices. By current fitting, Schottky emission can be observed in both low and high resistance states, from which conduction model is proposed to clarify the oxygen accumulation phenomenon. Reliability tests, including endurance and high temperature retention are further carried out, evaluating the significance of oxygen accumulation effect in redox reaction for RRAM devices.
Keywords :
gadolinium; indium compounds; integrated circuit reliability; random-access storage; silicon compounds; tin compounds; Gd:SiO2; InSnO; RRAM devices; Schottky emission; conduction current mechanism; current fitting; high resistance states; low resistance states; oxygen absorbance; oxygen accumulation effect; redox reaction; reliability tests; resistance random access memory; resistive switching; Educational institutions; Electrodes; Indium tin oxide; Resistance; Silicon; Switches; Tin; Oxygen accumulation; RRAM; RRAM.; Schottky emission; indium tin oxide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2316806
