Title :
Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory
Author :
Chih-Cheng Shih ; Kuan-Chang Chang ; Ting-Chang Chang ; Tsung-Ming Tsai ; Rui Zhang ; Jung-Hui Chen ; Kai-Huang Chen ; Tai-Fa Young ; Hsin-Lu Chen ; Jen-Chung Lou ; Tian-Jian Chu ; Syuan-Yong Huang ; Ding-Hua Bao ; Sze, Simon M.
Author_Institution :
Dept. of Mater. & Optoelectron. Sci., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
Photosensitivity to ultraviolet (UV) light for zinc oxide (ZnO) resistance random access memory (RRAM) with transparent electrode was investigated and characterized in this paper. The resistive switching properties were affected severely through oxygen manipulation by UV light irradiation. To clarify the switching mechanism, conduction current fitting was applied and meanwhile a reaction model was proposed to explain the origin of drastic current variation. UV light-assisted oxygen manipulation in ZnO RRAM is an efficient method to modify device switching behavior, and this investigation also unveils the interesting phenomenon of transparent electrode RRAM under UV light illumination condition.
Keywords :
II-VI semiconductors; electrochemical electrodes; photoelectrochemistry; random-access storage; switching circuits; wide band gap semiconductors; zinc compounds; RRAM; UV light illumination condition; UV light-assisted oxygen manipulation; ZnO; conduction current fitting; drastic current variation; photosensitivity; resistive switching modification; resistive switching property; transparent electrode; transparent electrode resistive random access memory; Electron devices; Ions; Lighting; Random access memory; Resistance; Switches; Zinc oxide; RRAM; ZnO; current conduction mechanism; current conduction mechanism.; ultra-violet light;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2316673
