• DocumentCode
    1757658
  • Title

    Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

  • Author

    Chih-Cheng Shih ; Kuan-Chang Chang ; Ting-Chang Chang ; Tsung-Ming Tsai ; Rui Zhang ; Jung-Hui Chen ; Kai-Huang Chen ; Tai-Fa Young ; Hsin-Lu Chen ; Jen-Chung Lou ; Tian-Jian Chu ; Syuan-Yong Huang ; Ding-Hua Bao ; Sze, Simon M.

  • Author_Institution
    Dept. of Mater. & Optoelectron. Sci., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • Volume
    35
  • Issue
    6
  • fYear
    2014
  • fDate
    41791
  • Firstpage
    633
  • Lastpage
    635
  • Abstract
    Photosensitivity to ultraviolet (UV) light for zinc oxide (ZnO) resistance random access memory (RRAM) with transparent electrode was investigated and characterized in this paper. The resistive switching properties were affected severely through oxygen manipulation by UV light irradiation. To clarify the switching mechanism, conduction current fitting was applied and meanwhile a reaction model was proposed to explain the origin of drastic current variation. UV light-assisted oxygen manipulation in ZnO RRAM is an efficient method to modify device switching behavior, and this investigation also unveils the interesting phenomenon of transparent electrode RRAM under UV light illumination condition.
  • Keywords
    II-VI semiconductors; electrochemical electrodes; photoelectrochemistry; random-access storage; switching circuits; wide band gap semiconductors; zinc compounds; RRAM; UV light illumination condition; UV light-assisted oxygen manipulation; ZnO; conduction current fitting; drastic current variation; photosensitivity; resistive switching modification; resistive switching property; transparent electrode; transparent electrode resistive random access memory; Electron devices; Ions; Lighting; Random access memory; Resistance; Switches; Zinc oxide; RRAM; ZnO; current conduction mechanism; current conduction mechanism.; ultra-violet light;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2014.2316673
  • Filename
    6805163