GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

Author

Yu-Hsuan Hsiao ; Meng-Lin Tsai ; Jr-Hau He

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

51

Issue

2

fYear

2015

fDate

March-April 2015

Firstpage

1277

Lastpage

1283

Abstract

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques.

Keywords

III-V semiconductors; gallium compounds; integrated optoelectronics; light emitting diodes; nanofabrication; nanophotonics; optical fabrication; quantum well devices; semiconductor quantum wells; wide band gap semiconductors; GaN; LED; fabrication techniques; light extraction enhancement; multiple-quantum-well light-emitting Diodes; nanostructures; nanotechnology; photon management; radiation pattern control; strain relaxation; white-light devices; Antenna radiation patterns; Gallium nitride; Light emitting diodes; Nanostructures; Photonic crystals; Quantum well devices; Surface morphology; GaN; Light emitting diode; light-emitting diode (LED); multiple quantum well; multiple quantum well (MQW); nanostructure;

fLanguage

English

Journal_Title

Industry Applications, IEEE Transactions on

Publisher

ieee

ISSN

0093-9994

Type

jour

DOI

10.1109/TIA.2014.2360984

Filename

6914566