DocumentCode
1757762
Title
Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting 
at  InAs quantum well MOSFETs incorporating a vertical spacer formed by metal-organic chemical vapor deposition epitaxial regrowth. By adopting a 12-nm-thick vertical spacer between the channel and the N+ S/D, OFF-state characteristics are significantly improved. A device with a 40-nm-Lg and 12-nm-thick spacer shows 2.5-mS/μm peak transconductance (gm), 86-mV/decade subthreshold swing at V<sub>DS</sub> = 0.5 V, 83-mV/V drain-induced barrier lowering, and 482-μA/μm ON-current at 100-nA/μm OFF-current and VDD = 0.5 V. In addition, a 3.0-mS/μm peak gm at V<sub>DS</sub> = 0.5 V is achieved in an 18-nm-Lg device with a 2-nm-thick spacer, the highest reported peak gm of any field-effect transistor.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>III-V semiconductors; MOCVD; MOSFET; indium compounds; quantum well devices; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; InAs; OFF-state characteristics; S/D quantum well MOSFETs; field-effect transistor; highly scalable raised source-drain quantum well MOSFETs; metal-organic chemical vapor deposition epitaxial regrowth; size 12 nm; size 18 nm; size 2 nm; vertical spacer; voltage 0.5 V; Electrostatics; Indium compounds; Leakage currents; Logic gates; MOSFET; Performance evaluation; Resistance; III-V MOSFETs; InAs channel; InAs channel.; S/D regrowth; vertical spacer;</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fLanguage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>English</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Journal_Title</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Electron Device Letters, IEEE</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Publisher</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>ieee</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>ISSN</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>0741-3106</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Type</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>jour</h2></div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>DOI</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>10.1109/LED.2014.2317146</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Filename</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>6805175</div></div>
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https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1757762
https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1757762Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting
https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1757762