Title :
Rare-Earth-Free Direct-Emitting Light-Emitting Diodes for Solid-State Lighting
Author :
Wetzel, Christian ; Detchprohm, Theeradetch
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
The advent of a wide-bandgap GaN p-n junction has enabled highly efficient blue light-emitting diodes (LEDs) in GaInN/GaN heteroepitaxy. The system also enables a much wider range of emission wavelengths. We summarize progress in epitaxial materials development of green, yellow, and orange direct-emitting LEDs that bypass the steps of external phosphor conversion to achieve higher stability, efficiency, and higher overall color rendering quality for wider adoption of one of the widest power savings resources so far identified.
Keywords :
LED lamps; gallium compounds; indium compounds; lighting; rare earth metals; GaInN-GaN; color rendering quality; emission wavelengths; epitaxial materials development; external phosphor conversion; green direct-emitting LED; heteroepitaxy; orange direct-emitting LED; power savings resources; rare-earth-free direct-emitting light-emitting diodes; solid-state lighting; wide-bandgap p-n junction; yellow direct-emitting LED; Color; Gallium nitride; Light emitting diodes; Phosphors; Photonics; Solid state lighting; III-V semiconductor materials; LED lamps; light emitting diodes; semiconductor diodes; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors;
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.2013.2279192