DocumentCode :
1757862
Title :
Stress- and temperature-compensated orientations for thickness-shear langasite resonators for high-temperature and high-pressure environment
Author :
Patel, Mihir S. ; Sinha, Bikash K.
Author_Institution :
Math. & Modeling Dept., Schlumberger-Doll Res., Cambridge, MA, USA
Volume :
62
Issue :
6
fYear :
2015
fDate :
42156
Firstpage :
1095
Lastpage :
1103
Abstract :
This paper describes an exhaustive study of the variations of the mean force sensitivity coefficients in the entire region of crystalline langasite (LGS). We also study the variation of temperature coefficients in the entire region of the crystalline LGS and its isomorphs. The computational results have been obtained from a procedure that has been successfully employed in the study of the planar and temperature stress-induced frequency shifts in thickness-mode resonators. Both the fast and slow thickness-shear modes have been studied. Among other things, the loci of orientations with zero stress and temperature coefficients of frequency have been identified for LGS.
Keywords :
crystal resonators; gallium compounds; lanthanum compounds; pressure measurement; pressure sensors; temperature measurement; temperature sensors; La3Ga5SiO14; crystalline langasite; high-pressure environment; high-temperature environment; isomorphs; mean force sensitivity coefficients; orientation loci; planar frequency shifts; pressure sensors; stress-compensated orientation; temperature coefficients of frequency; temperature sensors; temperature stress-induced frequency shifts; temperature-compensated orientation; thickness-shear langasite resonators; Dielectric constant; Force; Resonant frequency; Stress; Temperature; Temperature measurement; Temperature sensors;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2014.006857
Filename :
7119990
Link To Document :
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