InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

Author

Waldron, Niamh ; Merckling, C. ; Teugels, Lieve ; Ong, Patrick ; Ibrahim, Sheikh Ansar Usman ; Sebaai, Farid ; Pourghaderi, Ali ; Barla, Kathy ; Collaert, Nadine ; Thean, Aaron Voon-Yew

Author_Institution

imec, Leuven, Belgium

Volume

35

Issue

11

fYear

2014

fDate

Nov. 2014

Firstpage

1097

Lastpage

1099

Abstract

In this letter, we present the first InGaAs gate-all-around (GAA) nanowire devices fabricated on 300mm Si substrates. For an L_G of 60 nm an extrinsic g_m of 1030 μS/μm at V_ds = 0.5 V is achieved which is a 1.75× increase compared with the replacement fin FinFet process. This improvement is attributed to the elimination of Mg counterdoping in the GAA flow. Ultrascaled nanowires with diameters of 6 nm were demonstrated to show immunity to D_it resulting in an SS_SAT of 66 mV/decade and negligible drain-induced barrier lowering for 85-nm L_G devices.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; nanowires; substrates; GAA flow; InGaAs; InGaAs GAA nanowire devices; InGaAs gate-all-around nanowire devices; Mg counterdoping; Si substrates; drain-induced barrier lowering; replacement fin FinFet process; size 300 mm; size 60 nm; size 85 nm; ultrascaled nanowires; voltage 0.5 V; FinFETs; Indium gallium arsenide; Indium phosphide; Logic gates; Nanoscale devices; Performance evaluation; Silicon; FinFet; III-V; InGaAs; gate-all-around; nanowire;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2359579

Filename

6914587