Improvement in Field-Effect Mobility of Indium Zinc Oxide Transistor by Titanium Metal Reaction Method

Author

Hyuk Ji ; Ah Young Hwang ; Chang Kyu Lee ; Pil Sang Yun ; Jong Uk Bae ; Kwon-Shik Park ; Jae Kyeong Jeong

Author_Institution

Dept. of Mater. Sci. & Eng., Inha Univ., Incheon, South Korea

Volume

62

Issue

4

fYear

2015

fDate

42095

Firstpage

1195

Lastpage

1199

Abstract

This paper examined the effects of postdeposition annealing on the electrical properties of titanium-capped (TC) indium–zinc oxide (IZO) films and their IZO thin-film transistors. The TC IZO transistor oxidized at the temperature of 300 °C exhibited a high field-effect mobility of 61.0 cm $^{2}$ /Vs, low subthreshold gate swing of 110 mV/decade, $V_{\\rm th}$ of −0.4 V, and high $I_{{math\\rm{{\\scriptscriptstyle ON}}/math\\rm{{\\scriptscriptstyle OFF}}}}$ ratio of $2.3 \\times 10^{8}$ . In addition, the positive gate bias stress-induced stability of the TC IZO transistor was better than that of the control device without metal capping treatment. This was attributed to the scavenging effect of the loosely bonded oxygen species in the IZO semiconductor by titanium thermal oxidation.

Keywords

annealing; field effect transistors; indium compounds; oxidation; semiconductor materials; semiconductor thin films; thin film transistors; titanium; zinc compounds; InZnO-Ti; control device; electrical properties; field-effect mobility; indium zinc oxide thin-film transistors; loosely bonded oxygen; positive gate bias stress-induced stability; postdeposition annealing effects; scavenging effect; subthreshold gate swing; temperature 300 degC; titanium metal reaction method; titanium thermal oxidation; titanium-capped indium-zinc oxide films; voltage -0.4 V; Educational institutions; Logic gates; Metals; Plasmas; Temperature; Thin film transistors; Indium zinc oxide (IZO); metal capping; mobility; oxygen-related defect; thin-film transistors (TFTs); thin-film transistors (TFTs).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2406331

Filename

7055917