DocumentCode :
1757965
Title :
Improvement in Field-Effect Mobility of Indium Zinc Oxide Transistor by Titanium Metal Reaction Method
Author :
Hyuk Ji ; Ah Young Hwang ; Chang Kyu Lee ; Pil Sang Yun ; Jong Uk Bae ; Kwon-Shik Park ; Jae Kyeong Jeong
Author_Institution :
Dept. of Mater. Sci. & Eng., Inha Univ., Incheon, South Korea
Volume :
62
Issue :
4
fYear :
2015
fDate :
42095
Firstpage :
1195
Lastpage :
1199
Abstract :
This paper examined the effects of postdeposition annealing on the electrical properties of titanium-capped (TC) indium–zinc oxide (IZO) films and their IZO thin-film transistors. The TC IZO transistor oxidized at the temperature of 300 °C exhibited a high field-effect mobility of 61.0 cm ^{2} /Vs, low subthreshold gate swing of 110 mV/decade, V_{\\rm th} of −0.4 V, and high I_{{math\\rm{{\\scriptscriptstyle ON}}/math\\rm{{\\scriptscriptstyle OFF}}}} ratio of 2.3 \\times 10^{8} . In addition, the positive gate bias stress-induced stability of the TC IZO transistor was better than that of the control device without metal capping treatment. This was attributed to the scavenging effect of the loosely bonded oxygen species in the IZO semiconductor by titanium thermal oxidation.
Keywords :
annealing; field effect transistors; indium compounds; oxidation; semiconductor materials; semiconductor thin films; thin film transistors; titanium; zinc compounds; InZnO-Ti; control device; electrical properties; field-effect mobility; indium zinc oxide thin-film transistors; loosely bonded oxygen; positive gate bias stress-induced stability; postdeposition annealing effects; scavenging effect; subthreshold gate swing; temperature 300 degC; titanium metal reaction method; titanium thermal oxidation; titanium-capped indium-zinc oxide films; voltage -0.4 V; Educational institutions; Logic gates; Metals; Plasmas; Temperature; Thin film transistors; Indium zinc oxide (IZO); metal capping; mobility; oxygen-related defect; thin-film transistors (TFTs); thin-film transistors (TFTs).;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2406331
Filename :
7055917
Link To Document :
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