Title :
SiC Power Device Die Attach for Extreme Environments
Author :
Zhenzhen Shen ; Johnson, R. Wayne ; Hamilton, Michael C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., Auburn, AL, USA
Abstract :
Silicon carbide power diodes and transistors are enabling technology for power electronics capable of operating in extreme environments. In this paper, a AgBiX solder paste has been studied for SiC power device die attach to power substrates for 200 °C use in vehicle and downhole well logging applications. The solder paste has a controlled amount of Sn, which limits the amount of Sn intermetallic formation. This produces a stable solder joint as a function of time at high temperature. The die shear strength remained at ~38 MPa through 2000 h of storage at 200 °C. After 1000 thermal cycles from -55°C to 195 °C, the percent die attach area reduction due to solder cracking was <;10%.
Keywords :
microassembling; power semiconductor devices; silicon compounds; solders; wide band gap semiconductors; SiC; extreme environments; power device die attach; power diodes; power electronics; power substrates; power transistors; solder cracking; solder paste; stable solder joint; temperature -55 degC to 195 degC; temperature 200 degC; time 2000 h; Aging; Bismuth; Intermetallic; Microassembly; Silicon carbide; Substrates; Tin; Die attach; extreme environments; power packaging;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2358206