DocumentCode
1757983
Title
SiC Power Device Die Attach for Extreme Environments
Author
Zhenzhen Shen ; Johnson, R. Wayne ; Hamilton, Michael C.
Author_Institution
Dept. of Electr. & Comput. Eng., Auburn Univ., Auburn, AL, USA
Volume
62
Issue
2
fYear
2015
fDate
Feb. 2015
Firstpage
346
Lastpage
353
Abstract
Silicon carbide power diodes and transistors are enabling technology for power electronics capable of operating in extreme environments. In this paper, a AgBiX solder paste has been studied for SiC power device die attach to power substrates for 200 °C use in vehicle and downhole well logging applications. The solder paste has a controlled amount of Sn, which limits the amount of Sn intermetallic formation. This produces a stable solder joint as a function of time at high temperature. The die shear strength remained at ~38 MPa through 2000 h of storage at 200 °C. After 1000 thermal cycles from -55°C to 195 °C, the percent die attach area reduction due to solder cracking was <;10%.
Keywords
microassembling; power semiconductor devices; silicon compounds; solders; wide band gap semiconductors; SiC; extreme environments; power device die attach; power diodes; power electronics; power substrates; power transistors; solder cracking; solder paste; stable solder joint; temperature -55 degC to 195 degC; temperature 200 degC; time 2000 h; Aging; Bismuth; Intermetallic; Microassembly; Silicon carbide; Substrates; Tin; Die attach; extreme environments; power packaging;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2358206
Filename
6914593
Link To Document