• DocumentCode
    1757983
  • Title

    SiC Power Device Die Attach for Extreme Environments

  • Author

    Zhenzhen Shen ; Johnson, R. Wayne ; Hamilton, Michael C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Auburn Univ., Auburn, AL, USA
  • Volume
    62
  • Issue
    2
  • fYear
    2015
  • fDate
    Feb. 2015
  • Firstpage
    346
  • Lastpage
    353
  • Abstract
    Silicon carbide power diodes and transistors are enabling technology for power electronics capable of operating in extreme environments. In this paper, a AgBiX solder paste has been studied for SiC power device die attach to power substrates for 200 °C use in vehicle and downhole well logging applications. The solder paste has a controlled amount of Sn, which limits the amount of Sn intermetallic formation. This produces a stable solder joint as a function of time at high temperature. The die shear strength remained at ~38 MPa through 2000 h of storage at 200 °C. After 1000 thermal cycles from -55°C to 195 °C, the percent die attach area reduction due to solder cracking was <;10%.
  • Keywords
    microassembling; power semiconductor devices; silicon compounds; solders; wide band gap semiconductors; SiC; extreme environments; power device die attach; power diodes; power electronics; power substrates; power transistors; solder cracking; solder paste; stable solder joint; temperature -55 degC to 195 degC; temperature 200 degC; time 2000 h; Aging; Bismuth; Intermetallic; Microassembly; Silicon carbide; Substrates; Tin; Die attach; extreme environments; power packaging;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2014.2358206
  • Filename
    6914593