Title :
Superradiant Emission in Semiconductor Diode Laser Structures
Author :
Vasil´ev, P.P. ; Penty, Richard V. ; White, Ian H.
Author_Institution :
Centre for Photonic Syst., Univ. of Cambridge, Cambridge, UK
Abstract :
This paper reviews recent advances in superradiant (SR) emission in semiconductors at room temperature, a process which has been shown to enable the generation on demand of high power picosecond or subpicosecond pulses across a range of different wavelengths. The different characteristic features of SR emission from semiconductor devices with bulk, quantum-well, and quantum-dot active regions are outlined, and particular emphasis is placed on comparing the characteristic features of SR with those of lasing. Finally, potential applications of SR pulses are discussed.
Keywords :
optical pulse generation; quantum dot lasers; quantum well lasers; reviews; superradiance; SR emission; bulk active region; high power picosecond pulse generation; quantum-dot active region; quantum-well active region; reviews; semiconductor devices; semiconductor diode laser structure; subpicosecond pulse generation; superradiant emission; temperature 293 K to 298 K; Laser mode locking; Optical pulse generation; Optical pulses; Semiconductor lasers; Stimulated emission; Ultrafast optics; Semiconductor lasers; superradiance (SR); ultrashort pulses;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2012.2234085
