Superradiant Emission in Semiconductor Diode Laser Structures

Author

Vasil´ev, P.P. ; Penty, Richard V. ; White, Ian H.

Author_Institution

Centre for Photonic Syst., Univ. of Cambridge, Cambridge, UK

Volume

19

Issue

4

fYear

2013

fDate

July-Aug. 2013

Firstpage

1500210

Lastpage

1500210

Abstract

This paper reviews recent advances in superradiant (SR) emission in semiconductors at room temperature, a process which has been shown to enable the generation on demand of high power picosecond or subpicosecond pulses across a range of different wavelengths. The different characteristic features of SR emission from semiconductor devices with bulk, quantum-well, and quantum-dot active regions are outlined, and particular emphasis is placed on comparing the characteristic features of SR with those of lasing. Finally, potential applications of SR pulses are discussed.

Keywords

optical pulse generation; quantum dot lasers; quantum well lasers; reviews; superradiance; SR emission; bulk active region; high power picosecond pulse generation; quantum-dot active region; quantum-well active region; reviews; semiconductor devices; semiconductor diode laser structure; subpicosecond pulse generation; superradiant emission; temperature 293 K to 298 K; Laser mode locking; Optical pulse generation; Optical pulses; Semiconductor lasers; Stimulated emission; Ultrafast optics; Semiconductor lasers; superradiance (SR); ultrashort pulses;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2012.2234085

Filename

6381433