A Circuit Synthesis Flow for Controllable-Polarity Transistors

Double-gate (DG) controllable-polarity field-effect transistors (FETs) are devices whose n- or p- polarity is online configurable by adjusting the second gate voltage. Such emerging transistors have been fabricated in silicon nanowires, carbon nanotubes, and graphene technologies. Thanks to their enhanced functionality, DG controllable-polarity FETs implement arithmetic functions, such as XOR and MAJ, with limited physical resources enabling compact and high-performance datapaths. In order to design digital circuits with this technology, automated design techniques are of paramount importance. In this paper, we describe a design automation framework for DG controllable-polarity transistors. First, we present a novel dedicated logic representation form capable to exploit the polarity control during logic synthesis. Then, we tackle challenges at the physical level, presenting a regular layout technique that alleviates the interconnection issue deriving from the second gate routing. We use logic and physical synthesis tools to form a complete design automation flow. Experimental results show that the proposed flow is able to reduce the area and delay of digital circuits, based on 22-nm DG controllable-polarity Silicon nanowire (SiNW) FETs, by 22% and 42%, respectively, as compared to a commercial synthesis tool. With respect to a 22-nm FinFET technology, the proposed flow produces circuits, based on 22-nm DG controllable-polarity SiNWFETs, with 2.9 × smaller area-delay product.