Title :
Effects of Extreme Temperature Swings (
to 250
) on Sil
Author :
Fukumoto, Ayako ; Berry, Dave ; Ngo, Khai D. T. ; Guo-Quan Lu
Author_Institution :
Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Amagasaki, Japan
Abstract :
Reliability of power electronic substrates has been one of the main issues of high-temperature packaging technologies. Widely used direct bonded copper (DBC) substrates, if subjected to wide temperature swings, suffer from copper layers peeling off from a ceramic because of the large thermal stresses resulting from the difference in coefficient of thermal expansion (CTE) between the copper and the ceramic (e.g., Al2O3 or AlN). Recently, silicon nitride active metal brazing (Si3N4-AMB) substrate has been developed with the aim to utilize power electronic substrates for extreme environmental conditions. Si3N4-AMB has superior reliability because of the high mechanical strength of Si3N4. In this paper, the effects of extreme temperature swings (-55 °C to 250 °C) on Si3N4-AMB substrates were investigated to evaluate their applicability to harsh environment. Their high resistance to the peeling off of copper layers was confirmed. However, the surface-roughening phenomenon was observed on the surface of copper layers after the temperature cycling test. The mechanism of surface roughening was analyzed. It was found that the out-of-plane displacement of single grains, which is called the orange-peel phenomenon, occurred on the surface of the copper layers.
Keywords :
III-V semiconductors; alumina; brazing; copper; power electronics; silicon compounds; surface roughness; thermal management (packaging); wide band gap semiconductors; Al2O3; AlN; CTE; DBC substrates; Si3N4; active metal brazing substrates; coefficient of thermal expansion; copper layer surface; copper layers; direct bonded copper substrates; extreme temperature swings; high-temperature packaging technologies; large thermal stresses; mechanical strength; orange-peel phenomenon; out-of-plane displacement; power electronic substrate reliability; silicon nitride; surface roughening mechanism; surface-roughening phenomenon; temperature -55 C to 250 C; temperature cycling test; wide temperature swings; Ceramics; Copper; Power electronics; Rough surfaces; Substrates; Surface roughness; Active metal brazing (AMB); high-temperature packaging; power electronic substrates; silicon nitride $(hbox{Si}_{3}hbox{N}_{4})$; surface roughening; temperature cycling;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2014.2320057