Title :
Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs
Author :
Zhang, Cher Xuan ; Zhang, En Xia ; Fleetwood, Daniel M. ; Schrimpf, Ronald D. ; Dhar, Sarit ; Ryu, Sei-Hyung ; Shen, Xiao ; Pantelides, Sokrates T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Detailed studies of the temperature and voltage dependences of the low-frequency noise of 4H-SiC MOSFETs and TCAD simulations show that the noise is caused primarily by interface traps. First-principle calculations identify these traps as carbon vacancy clusters and nitrogen dopant atoms at or near the SiC/SiO2 interface.
Keywords :
MOSFET; silicon compounds; wide band gap semiconductors; 4H-MOSFET; SiC-SiO2; TCAD simulations; carbon vacancy clusters; first-principle calculations; interface traps; low-frequency noise; nitrogen dopant atoms; Carbon; Logic gates; Low-frequency noise; MOSFETs; Silicon carbide; Temperature measurement; Interface traps; low-frequency noise; silicon carbide; temperature dependence;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2228161
