• DocumentCode
    1758142
  • Title

    Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs

  • Author

    Zhang, Cher Xuan ; Zhang, En Xia ; Fleetwood, Daniel M. ; Schrimpf, Ronald D. ; Dhar, Sarit ; Ryu, Sei-Hyung ; Shen, Xiao ; Pantelides, Sokrates T.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
  • Volume
    34
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    117
  • Lastpage
    119
  • Abstract
    Detailed studies of the temperature and voltage dependences of the low-frequency noise of 4H-SiC MOSFETs and TCAD simulations show that the noise is caused primarily by interface traps. First-principle calculations identify these traps as carbon vacancy clusters and nitrogen dopant atoms at or near the SiC/SiO2 interface.
  • Keywords
    MOSFET; silicon compounds; wide band gap semiconductors; 4H-MOSFET; SiC-SiO2; TCAD simulations; carbon vacancy clusters; first-principle calculations; interface traps; low-frequency noise; nitrogen dopant atoms; Carbon; Logic gates; Low-frequency noise; MOSFETs; Silicon carbide; Temperature measurement; Interface traps; low-frequency noise; silicon carbide; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2228161
  • Filename
    6381444
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1758142