Title :
Measurement and Compact Modeling of 1/f Noise in HV-MOSFETs
Author :
Mavredakis, N. ; Bucher, Matthias ; Friedrich, R. ; Bazigos, Antonios ; Krummenacher, Francois ; Sallese, Jean-Michel ; Gneiting, T. ; Pflanzl, Walter ; Seebacher, E.
Author_Institution :
Tech. Univ. of Crete, Chania, Greece
Abstract :
This paper investigates 1/f noise behavior under low and high drain biases of high-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs) (HV-MOSFETs). A dedicated setup is presented which allows measuring low-frequency (LF) noise of lateral double-diffused MOSFETs (LDMOSFETs) up to 200 V at the drain. LF noise spectra of n- and p-channel LDMOSFETs were measured over a large range of gate and drain bias conditions and modeled using a recently established physics-based compact model of HV-MOSFETs. The investigated devices confirm that the overall noise is mostly dominated by the noise originating in the channel, while the drift-region-generated noise only is apparent in linear operation.
Keywords :
1/f noise; MOSFET; high-voltage techniques; noise measurement; semiconductor device measurement; semiconductor device noise; 1/f noise behavior; 1/f noise compact modeling; 1/f noise measurement; HV-MOSFET; LF noise spectra; channel noise origination; drift-region-generated noise; gate bias conditions; high drain biases; high-voltage metal-oxide-semiconductor field-effect transistors; lateral double-diffused MOSFET; linear operation; low drain biases; low-frequency noise measurement; n-channel LDMOSFET; p-channel LDMOSFET; physics-based compact model; Current measurement; Low-frequency noise; Noise measurement; Semiconductor device measurement; Transistors; Voltage measurement; $hbox{1}/f$ noise; High-voltage (HV) metal–oxide–semiconductor field-effect transistor (MOSFET) (HV-MOSFET); lateral double-diffused MOSFET (LD-MOSFET); low-frequency (LF) noise;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2230329
