Title :
A Solution-Processed Organic Thin-Film Transistor Backplane for Flexible Multiphoton Emission Organic Light-Emitting Diode Displays
Author :
Mizukami, Makoto ; Oku, Shinya ; Cho, Seung-Il ; Tatetsu, Masahiro ; Abiko, Miho ; Mamada, Masashi ; Sakanoue, Tomo ; Suzuri, Yoshiyuki ; Kido, Junji ; Tokito, Shizuo
Author_Institution :
Innovation Center for Org. Electron., Yamagata Univ., Yonezawa, Japan
Abstract :
An active matrix backplane based on solution-processed organic thin-film transistors (OTFTs) has been developed for flexible displays having multiphoton organic light-emitting diodes (OLEDs). The OTFT device has a bottom-gate/bottom-contact type structure consisting of a polyethylene naphthalate-based flexible substrate covered with patterned gate electrodes and a gate dielectric of UV-cured cardo-polymer. Teflon AF was used for a hydrophobic bank structure that defines active regions of the OTFTs, and the organic semiconductor was coated by solution shearing. The OTFT backplane fabricated here had 384 × 128 pixels at a resolution of 300 dpi; images and video were successfully displayed on the resulting flexible multiphoton-emission OLED display.
Keywords :
organic light emitting diodes; organic semiconductors; thin film transistors; UV-cured cardo-polymer; active matrix backplane; bottom-contact type structure; bottom-gate type structure; flexible displays; flexible multiphoton emission; flexible substrate; gate dielectric; hydrophobic bank structure; multiphoton OLED; organic light-emitting diode displays; organic semiconductor; organic thin-film transistor backplane; patterned gate electrodes; polyethylene naphthalate; solution shearing; solution-processed organic TFT; teflon AF; Backplanes; Dielectrics; Electrodes; Logic gates; Organic light emitting diodes; Organic thin film transistors; Dielectrics; Display; Organic light-emitting diodes; Organic semiconductors; Organic thin-film transistors; dielectrics; display; organic light-emitting diodes; organic semiconductors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2443184