Title :
Erratum: A Compact Scattering Model for the Nanoscale Double-Gate MOSFET [Mar 02 481-489]
Author :
Rahman, Anisur ; Lundstrom, Mark S.
Author_Institution :
, Purdue University, West Lafayette, IN, USA
Abstract :
Corrections to formulas and equations for the paper "A Compact Scattering Model for the Nanoscale Double-Gate MOSFET" (Rahman, A. and Lundstrom, M.S.; IEEE Trans. Electron Devices, vol. 49, no. 3, pp. 481???489, Mar. 2002) are presented.
Keywords :
Backscatter; Charge carrier processes; Double-gate FETs; MOS devices; MOSFET; Nanoscale devices; Semiconductor device modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2437276
