DocumentCode :
1758596
Title :
Gamma and Proton-Induced Dark Current Degradation of 5T CMOS Pinned Photodiode 
CMOS Image Sensors
Author :
Martin, Eric ; Nuns, T. ; David, J.-P. ; Gilard, O. ; Vaillant, Joris ; Fereyre, Pierre ; Prevost, Vincent ; Boutillier, M.
Author_Institution :
CNES, Toulouse, France
Volume :
61
Issue :
1
fYear :
2014
fDate :
Feb. 2014
Firstpage :
636
Lastpage :
645
Abstract :
The radiation tolerance of a 0.18 μm technology CMOS commercial image sensor has been evaluated with Co60 and proton irradiations. The effects of protons on the hot pixels and dynamic bias and duty cycle conditions during gamma irradiations are studied.
Keywords :
CMOS image sensors; dark conductivity; gamma-ray effects; photodiodes; proton effects; CMOS image sensors; CMOS pinned photodiode; gamma induced dark current degradation; proton induced dark current degradation; radiation tolerance; Current measurement; Dark current; Degradation; Logic gates; Protons; Radiation effects; Sensors; CIS; TID; dark current; displacement damage dose;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2013.2297204
Filename :
6733394
Link To Document :
