Title :
Performance Enhancement on p-Channel Charge-Trapping Flash Memory Device With Epitaxial Si/Ge Super-Lattice Channel
Author :
Li-Jung Liu ; Kuei-Shu Chang-Liao ; Yi-Chuen Jian ; Jen-Wei Cheng ; Tien-Ko Wang ; Ming-Jinn Tsai
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Operation characteristics of p-channel TaN/Al2O3/HfO2/HfAlO2/SiO2/Si MAHOS-type nonvolatile memory devices with an epitaxial Si/Ge super-lattice (SL) channel are investigated in this letter, where the SL channel is characterized with good crystal structure and high thermal stability. Remarkable improvement on programming and erasing speeds is observed, as compared to those with SiGe channel. Furthermore, the degradation on reliability properties of retention and endurance is negligible for the device with employing a SL channel.
Keywords :
Ge-Si alloys; aluminium compounds; circuit reliability; circuit stability; elemental semiconductors; flash memories; hafnium compounds; random-access storage; semiconductor superlattices; silicon; silicon compounds; tantalum compounds; thermal stability; MAHOS-type nonvolatile memory device; SL; TaN-Al2O3-HfO2-HfAlO2-SiO2-Si-Si-Ge; crystal structure; epitaxial super-lattice channel; p-channel charge-trapping flash memory device; reliability; thermal stability; Electron devices; Epitaxial growth; Flash memory; Germanium; Programming; Silicon; Silicon germanium; Atomic layer deposition (ALD); charge-trapping Flash memory; high-$kappa$; layer-by-layer growth; super-lattice channel;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2250476
