Performance Enhancement on p-Channel Charge-Trapping Flash Memory Device With Epitaxial Si/Ge Super-Lattice Channel

Author

Li-Jung Liu ; Kuei-Shu Chang-Liao ; Yi-Chuen Jian ; Jen-Wei Cheng ; Tien-Ko Wang ; Ming-Jinn Tsai

Author_Institution

Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

34

Issue

5

fYear

2013

fDate

41395

Firstpage

587

Lastpage

589

Abstract

Operation characteristics of p-channel TaN/Al₂O₃/HfO₂/HfAlO₂/SiO₂/Si MAHOS-type nonvolatile memory devices with an epitaxial Si/Ge super-lattice (SL) channel are investigated in this letter, where the SL channel is characterized with good crystal structure and high thermal stability. Remarkable improvement on programming and erasing speeds is observed, as compared to those with SiGe channel. Furthermore, the degradation on reliability properties of retention and endurance is negligible for the device with employing a SL channel.

Keywords

Ge-Si alloys; aluminium compounds; circuit reliability; circuit stability; elemental semiconductors; flash memories; hafnium compounds; random-access storage; semiconductor superlattices; silicon; silicon compounds; tantalum compounds; thermal stability; MAHOS-type nonvolatile memory device; SL; TaN-Al₂O₃-HfO₂-HfAlO₂-SiO₂-Si-Si-Ge; crystal structure; epitaxial super-lattice channel; p-channel charge-trapping flash memory device; reliability; thermal stability; Electron devices; Epitaxial growth; Flash memory; Germanium; Programming; Silicon; Silicon germanium; Atomic layer deposition (ALD); charge-trapping Flash memory; high-$kappa$; layer-by-layer growth; super-lattice channel;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2250476

Filename

6479681